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Tuesday, July 14, 2020 | History

2 edition of Proceedings of the 17th International Symposium on Power Semiconductor Devices & ICs found in the catalog.

Proceedings of the 17th International Symposium on Power Semiconductor Devices & ICs

International Symposium on Power Semiconductor Devices & ICs (17th 2005 Santa Barbara, Calif.)

Proceedings of the 17th International Symposium on Power Semiconductor Devices & ICs

May 23-26, 2005, Santa Barbara, CA

by International Symposium on Power Semiconductor Devices & ICs (17th 2005 Santa Barbara, Calif.)

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  • 14 Currently reading

Published by Institute of Electrical Engineers in Piscataway, N.J .
Written in English

    Subjects:
  • Power electronics -- Congresses.,
  • Power semiconductors -- Congresses.,
  • Integrated circuits -- Congresses.

  • Edition Notes

    Other titlesPower semiconductor devices & ICs, ISPSD"05
    Statementsponsored by IEEE Electron Devices Society and Institute of Electrical Engineers of Japan.
    GenreCongresses.
    ContributionsIEEE Electron Devices Society., Denki Gakkai (1888)
    Classifications
    LC ClassificationsTK7881.15 .I59 2005
    The Physical Object
    Paginationxxiii, 377 p. :
    Number of Pages377
    ID Numbers
    Open LibraryOL22670228M
    ISBN 100780388895, 0780388909
    LC Control Number2004116422

    Publications of Elena Gnani. Associate Professor at Department of Electrical, Electronic, and Information Engineering "Guglielmo Marconi" — DEI BARCELONA, s.n, , pp. - (atti di: 21st International Symposium on Power Semiconductor Devices and ICs (ISPSD ), Barcelona, Spain, giugno, ) International.   IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) Location: Žofín Palace, Prague, Czech Republic. Event date: Sunday, J Power. RF Products.

    Schottky Contacts to Silicon Carbide: Physics, Technology and Applications F. Roccaforte, G. Brezeanu, P. M. Gammon, F. Giannazzo, S. Rascunà, M. Saggio Understanding the physics and technology of Schottky contacts to Silicon Carbide is important, for both academic and industrial researchers.   Semiconductor; Transportation Power Electronics; Membership. Benefits of PSMA Membership; Joining Information; Application form; Member Listings - Members, A - Z - Power Supplies - Components - Service Related - By Market Segment; Members Only; 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Date: May

    S. Poli, S. Reggiani, G. Baccarani, E. Gnani, A. Gnudi, M. Denison, S. Pendharkar, R. Wise, Full understanding of hot-carrier-induced degradation in STI-based LDMOS transistors in the impact-ionization operating regime, in Proceedings of the International Symposium on Power Semiconductor Devices ICs, , pp. – Google Scholar. The 17th International Symposium on Power Semiconductor Devices and ICs, > - Abstract We have designed, simulated and experimentally demonstrated high .


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Proceedings of the 17th International Symposium on Power Semiconductor Devices & ICs by International Symposium on Power Semiconductor Devices & ICs (17th 2005 Santa Barbara, Calif.) Download PDF EPUB FB2

International Symposium on Power Semiconductor Devices & ICs (17th: Santa Barbara, Calif.). Proceedings of the 17th International Symposium on Power Semiconductor Devices & ICs. Piscataway, N.J.: Institute of Electrical Engineers, [©] (OCoLC) Material Type: Conference publication, Document, Internet resource: Document Type.

Title International Symposium on Power Semiconductor Devices & ICs Desc:Proceedings of a meeting held MayOrlando, Florida.

Prod#:CFP08ISP-POD ISBN Pages (1 Vol) Format:Softcover Notes: Authorized distributor of all IEEE proceedings TOC:View Table of Contents Publ:Institute of Electrical and Electronics Engineers (IEEE) POD Publ:Curran.

Title 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD ) Desc:Proceedings of a meeting held JunePrague, Czech Republic. Prod#:CFP16ISP-POD ISBN Pages (1 Vol) Format:Softcover Notes: Authorized distributor of all IEEE proceedings TOC:View Table of Contents Publ:Institute of Electrical and Electronics Engineers (IEEE.

ISPSD 28th Internati onal Symposium on Power Semiconductor Devices and ICs (ISPSD) June 12–16,Žofí n Palace, Prague, Czech Republic – Through Recessed and Regrowth Gate Technology for Realizing Process Stability of GaN-GITs.

Hong Kong, China May IEEE Catalog Number: ISBN: CFP15ISP-POD IEEE 27th International Symposium on Power Semiconductor Devices & IC’s.

Proceedings of the International Symposium on Power Semiconductor Devices & ICs Browse related items Start at call number: TK I59 3RD TK. Proceedings of the 13th International Symposium on Power Semiconductor Devices & Ics: Ispsd'01 JuneOsaka International Convention Center Japan (IEEE Conference Proceedings) [Institute of Electrical and Electronics Engineers] on *FREE* shipping on qualifying offers.

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Power Semiconductor Devices and ICs, 10th International SymposiumReviews: 1. Book, Online, Conference in English ISPSD ' IEEE 15th International Symposium on Power Semiconductor Devices and ICs proceedings: Cambridge, UK, 14thth April [sponsored by] IEEE, IEE, the Institute of Electrical Engineers of Japan.

Piscataway, N.J. International Symposium on Power Semiconductor Devices and ICs inexplore presented research, speakers and authors of ISPSD Power Semiconductor Devices and ICs,proceedings, ISPSD '03, IEEE 15th International Symposium on.

IEEE 15th International Symposium on Power Semiconductor Devices and ICs proceedings Power semiconductor devices & ICs: Responsibility: [sponsored by] IEEE, IEE, the Institute of Electrical Engineers of Japan. SIAM Journal on Scientific and Statistical ComputingNoEX), Progress in Technology CAD for Power Devices, Circuits and Systems.

Proceedings. ISPSD ' The 17th International Symposium on Power Semiconductor Devices and ICs,The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record scientists from 40 countries participated in the Conference which was held in San Francisco August 61 0,   The 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) The International Semiconductor Device Research Symposium (ISDRS ) focuses on exploratory research in semiconductor devices and materials.

The purpose of the symposium is to bring together participants from diverse backgrounds and to provide a forum for interaction between engineers, scientists and students working in the fields of.

Compound Semiconductors Proceedings of the 26th International Symposium on Compound Semiconductors, th AugustBerlin, Germany - CRC Press Book. Physics-Based Dynamic Electro-Thermal Models of Power Bipolar Devices (Pin Diode and IGBT) Proceedings of the 13th International Symposium.

How to Ensure a Bright Future for Electric Vehicles. Electric cars are the future — but how can society ensure their long-term success.

Sustainability is important in a world with finite materials and hampered by climate change. The 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD) will take place at the Royton Sapporo, Sapporo, Japan May 28–June 1,including short course on May ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices and integrated circuits, their hybrid technologies, and.

The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED ) October 8 – 12, The Banff Centre Tunnel Mountain Dr Banff, Alberta, Canada. It is our great pleasure to invite you to participate in the 11th International Symposium on.

New Power Device Figure of Merit for High-Frequency Applications,” Proceedings of International Symposium on Power Semiconductor Devices & ICs, pp. Lorenz et al., “COOLMOS(TM) - a new milestone in high voltage Power MOS,” Proceedings of the 11th International Symposium on Power Semiconductor Devices & ICs,pp.IEEE.Dear Ee conference participants, all presented papers at the 20th International Symposium on Power Electronics - Ee are now included in the SCOPUS - abstract and citation data base.

See you at the next 21st symposium in Novi Sad In Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, Monterey, CA, USA, 18–20 May ; pp. 84– [Google Scholar] Chow, T.P.; Tyagi, R. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices.

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